FDN335N general description this n-channel 2.5v specified mosfet is produced using fairchild semiconductor's advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. applications ? dc/dc converter ? load switch features ? 1.7 a, 20 v. r ds(on) = 0.07 w @ v gs = 4.5 v r ds(on) = 0.100 w @ v gs = 2.5 v. ? low gate charge (3.5nc typical). ? high performance trench technology for extremely low r ds(on) . ? high power and current handling capability. absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 20 v v gss gate-source voltage 8 v i d drain current - continuous (note 1a) 1.7 a - pulsed 8 p d power dissipation for single operation (note 1a) 0.5 w (note 1b) 0.46 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r q jc thermal resistance, junction-to-case (note 1) 75 c/w package outlines and ordering information device marking device reel size tape width quantity 335 FDN335N 7 8mm 3000 units gs d g d s supersot -3 tm 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics t a = 25c unless otherwise noted s y mbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 m a20 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a,referenced to 25 c14mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 m a i gssf gate-body leakage current, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -8 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 m a 0.4 0.9 1.5 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = 250 m a,referenced to 25 c-3mv/ c r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 1.7 a v gs = 4.5 v, i d = 1.7 a,t j = 125 c v gs = 2.5 v, i d = 1.5 a 0.055 0.079 0.078 0.070 0.120 0.100 w i d(on) on-state drain current v gs = 4.5 v, v ds = 5 v 8 a g fs forward transconductance v ds = 5 v, i d = 1.5 a 7 s dynamic characteristics c iss input capacitance 310 pf c oss output capacitance 80 pf c rss reverse transfer capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 40 pf switching characteristics (note 2) t d(on) turn-on delay time 5 15 ns t r turn-on rise time 8.5 17 ns t d(off) turn-off delay time 11 20 ns t f turn-off fall time v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 w 310ns q g total gate charge 3.5 5 nc q gs gate-source charge 0.55 nc q gd gate-drain charge v ds = 10 v, i d = 1.7 a, v gs = 4.5 v, 0.95 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 0.42 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.42 a (note 2) 0.7 1.2 v notes: 1: r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. scale 1 : 1 on letter size paper 2: pulse test: pulse width 300 m s, duty cycle 2.0% a) 250 c/w when mounted on a 0.02 in 2 pad of 2 oz. cu. b) 270 c/w when mounted on a minimum pad. FDN335N smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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